View EM484M3244VTC-75F_5731078.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

eorex em484m3244vtc jul. 2006 www.eorex.com 1/18 128mb (1m 4bank 32) synchronous dram features ? fully synchronous to positive clock edge ? single 3.3v 0.3v power supply ? lvttl compatible with multiplexed address ? programmable burst length (b/l) - 1, 2, 4, 8 or full page ? programmable cas latency (c/l) - 2 or 3 ? data mask (dqm) for read / write masking ? programmable wrap sequence ? sequential (b/l = 1/2/4/8/full page) ? interleave (b/l = 1/2/4/8) ? burst read with single-bit write operation ? all inputs are sampled at the rising edge of the system clock ? auto refresh and self refresh ? 4,096 refresh cycles / 64ms (15.625us) description the em484m3244vtc is synchronous dynamic random access memory (sdram) organized as 1meg words x 4 banks by 32 bits. all inputs and outputs are synchronized with the positive edge of the clock. the 128mb sdram uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 3.3v low power memory system. it also provides auto refresh with power saving / down mode. all inputs and outputs voltage levels are compatible with lvttl. available packages:tsopii 86p 400mil. ordering information part no organization max. freq package grade pb EM484M3244VTC-75F 4m x 32 133mhz @cl3 86pin tsop(ll ) commercial free em484m3244vtc-7f 4m x 32 143mhz @cl3 86pin tsop(ll) commercial free em484m3244vtc-6f 4m x 32 166mhz @cl3 86pin tsop(ll) commercial free EM484M3244VTC-75F 4m x 32 133mhz @cl3 86pin tsop(ll ) extended free em484m3244vtc-7f 4m x 32 143mhz @cl3 86pin tsop(ll) extended free em484m3244vtc-6f 4m x 32 166mhz @cl3 86pin tsop(ll) extended free EM484M3244VTC-75F 4m x 32 133mhz @cl3 86pin tsop(ll ) industrial free em484m3244vtc-7f 4m x 32 143mhz @cl3 86pin tsop(ll) industrial free em484m3244vtc-6f 4m x 32 166mhz @cl3 86pin tsop(ll) industrial free
eorex em484m3244vtc jul. 2006 www.eorex.com 2/18 * eorex reserves the right to change products or sp ecification without notice.
eorex em484m3244vtc jul. 2006 www.eorex.com 3/18 pin assignment 86pin tsop-ii / (400mil 875mil) / (0.5mm pin pitch)
eorex em484m3244vtc jul. 2006 www.eorex.com 4/18 pin description (simplified) pin name function 68 clk (system clock) master clock input (active on the positive rising e dge) 20 /cs (chip select) selects chip when active 67 cke (clock enable) activates the clk when ?h? and deactivates when ?l? . cke should be enabled at least one cycle prior to n ew command. disable input buffers for power down in st andby. 21,24~27,60~66 a0~a11 (address) row address (a0 to a11) is determined by a0 to a11 level at the bank active command cycle clk rising edge. ca (ca0 to ca7) is determined by a0 to a7 level at the read or write command cycle clk rising edge. and this column address becomes burst access start address. a10 defines the pre-charge mode. when a10= high at the pre-charge command cycle, all banks are pre-charged . but when a10= low at the pre-charge command cycle, only the bank that is selected by ba0/ba1 is pre-charged. 22, 23 ba0, ba1 (bank address) selects which bank is to be active. 19 /ras (row address strobe) latches row addresses on the positive rising edge o f the clk with /ras ?l?. enables row access & pre-charge. 18 /cas (column address strobe) latches column addresses on the positive rising edg e of the clk with /cas low. enables column access. 17 /we (write enable) latches column addresses on the positive rising edg e of the clk with /cas low. enables column access. 16,28,59,71 dqm0~dqm3 (data input/output mask) dqm controls i/o buffers. 2, 4, 5, 7, 8, 10, 11,13,31,33,34,36 ,37,39,40,42,45, 47,48,50,51,53, 54,56,74,76,77, 79,80,82,83,85 dq0~dq31 (data input/output) dq pins have the same function as i/o pins on a con ventional dram. 1,15,29,43/ 44,58,72,86 v dd /v ss (power supply/ground) v dd and v ss are power supply pins for internal circuits. 3,9,35,41,49,55, 75,81/6,12,32,38, 46,52,78,84 v ddq /v ssq (power supply/ground) v ddq and v ssq are power supply pins for the output buffers. 14,30,57,69,70, 73 nc (no connection) this pin is recommended to be left no connection on the device.
eorex em484m3244vtc jul. 2006 www.eorex.com 5/18 absolute maximum rating symbol item rating units v in , v out input, output voltage -0.3 ~ +4.6 v v dd , v ddq power supply voltage -0.3 ~ +4.6 v t op operating temperature range commercial 0 ~ +70 c extended -25 ~ +85 industrial -40 ~ +85 t stg storage temperature range -55 ~ +150 c p d power dissipation 1 w i os short circuit current 50 ma note: caution exposing the device to stress above those l isted in absolute maximum ratings could cause permanent damage. the device is not meant to be operated under conditions outside the limits described in the operational section of this specification. exposure to absolute maximum rating conditions for extended periods may affect d evice reliability. capacitance (v cc =3.3v, f=1mhz, t a =25c) symbol parameter min. typ. max. units c clk clock capacitance 3.5 pf c i input capacitance for clk, cke, address, /cs, /ras, /cas, /we, dqml, dqmu 3.8 pf c o input/output capacitance 4.5 pf recommended dc operating conditions (t a =0c ~70c) symbol parameter min. typ. max. units v dd power supply voltage 3.0 3.3 3.6 v v ddq power supply voltage (for i/o buffer) 3.0 3.3 3.6 v v ih input logic high voltage 2.0 v dd +0.3 v v il input logic low voltage -0.3 0.8 v note: * all voltages referred to v ss . * v ih (max.) = 5.6v for pulse width 3ns * v il (min.) = -2.0v for pulse width 3ns
eorex em484m3244vtc jul. 2006 www.eorex.com 6/18 recommended dc operating conditions (v dd =3.3v 0.3v, t a =0c ~70c) symbol parameter test conditions max. units i cc1 operating current (note 1) burst length=1, t rc t rc (min.), i ol =0ma, one bank active 130 ma i cc2p precharge standby current in power down mode cke v il (max.), t ck =15ns 2 ma i cc2ps cke v il (max.), t ck = 2 ma i cc2n precharge standby current in non-power down mode cke v il (min.), t ck =15ns, /cs v ih (min.) input signals are changed one time during 30ns 45 ma i cc2ns cke v il (min.), t ck = , input signals are stable 15 ma i cc3p active standby current in power down mode cke v il (max.), t ck =15ns 15 ma i cc3n active standby current in non-power down mode cke v il (min.), t ck =15ns, /cs v ih (min.) input signals are changed one time during 30ns 70 ma i cc4 operating current (burst mode) (note 2) t ccd 2clks, i ol =0ma 200 ma i cc5 refresh current (note 3) t rc t rc (min.) 230 ma i cc6 self refresh current cke 0.2v 2 (note 4) ma *all voltages referenced to v ss . note 1: i cc1 depends on output loading and cycle rates. specified values are obtained with the output open. input signals are changed only one time during t ck (min.) note 2: i cc4 depends on output loading and cycle rates. specified values are obtained with the output open. input signals are changed only one time during t ck (min.) note 3: input signals are changed only one time during t ck (min.) note 4: standard power version. recommended dc operating conditions (continued) symbol parameter test conditions min. typ. max. units i il input leakage current 0 v i v ddq , v ddq =v dd all other pins not under test=0v -5 +5 ua i ol output leakage current 0 v o v ddq , d out is disabled -5 +5 ua v oh high level output voltage i o =-4ma 2.4 v v ol low level output voltage i o =+4ma 0.4 v
eorex em484m3244vtc jul. 2006 www.eorex.com 7/18 block diagram row add. buffer row decoder address register auto/self refresh counter memory array s/a & i/o gating col. decoder col. add. buffer mode register set col. add. counter burst counter read dqm control write dqm control data in data out doi a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 a10 a11 ba0 ba1 timing register clk cke /cs /ras /cas /we dqm dqm
eorex em484m3244vtc jul. 2006 www.eorex.com 8/18 ac operating test conditions (v dd =3.3v 0.3v, t a =0c ~70c) item conditions output reference level 1.4v/1.4v output load see diagram as below input signal level 2.4v/0.4v transition time of input signals 2ns input reference level 1.4v ac operating test characteristics (v dd =3.3v 0.3v, t a =0c ~70c) symbol parameter -6 -7 -7.5 units min. max. min. max. min. max. t ck clock cycle time cl=3 6 7 7.5 ns cl=2 10 10 10 t ac access time form clk cl=3 5.5 5.5 6 ns cl=2 5 6 6 t ch clk high level width 2 2 2.5 ns t cl clk low level width 2 2 2.5 ns t oh data-out hold time cl=3 2.5 2.5 2.5 ns cl=2 t hz data-out high impedance time (note 5) cl=3 6 7 7 ns cl=2 t lz data-out low impedance time 0 0 0 ns t ih input hold time 1 1 1 ns t is input setup time 1.5 1.5 1.5 ns * all voltages referenced to v ss . note 5: t hz defines the time at which the output achieve the o pen circuit condition and is not referenced to output voltage levels.
eorex em484m3244vtc jul. 2006 www.eorex.com 9/18 ac operating test characteristics (continued) (v dd =3.3v 0.3v, t a =0c ~70c) symbol parameter -6 -7 -75 units min. max. min. max. min. max. t rc active to active command period (note 6) 60 65 67 ns t ras active to precharge command period (note 6) 42 100k 45 100k 45 100k ns t rp precharge to active command period (note 6) 3 3 3 clk t rcd active to read/write delay time (note 6) 3 3 3 clk t rrd active(one) to active(another) command (note 6) 2 2 2 clk t ccd read/write command to read/write command 1 1 1 clk t dpl date-in to precharge command 2 2 2 clk t bdl date-in to burst stop command 1 1 1 clk t roh data-out to high impedance from precharge command cl=3 3 3 3 clk cl=2 2 2 2 t ref refresh time (4,096 cycle) 64 64 64 ms * all voltages referenced to v ss . note 6: these parameters account for the number of clock cy cles and depend on the operating frequency of the clock, as follows: the number of clock cycles = specified value of tim ing/clock period (count fractions as a whole number) recommended power on and initialization the following power on and initialization sequence guarantees the device is preconditioned to each use r?s specific needs. (like a conventional dram) during p ower on, all v dd and v ddq pins must be built up simultaneously to the specified voltage when the in put signals are held in the ?nop? state. the power on voltage must not exceed v dd +0.3v on any of the input pins or v dd supplies. (clk signal started at same time) after power on, an initial pause of 200 s is requi red followed by a precharge of all banks using the precharge command. to prevent data contention on the dq bus during pow er on, it is required that the dqm and cke pins be held high during the initial pause period. once all banks have been precharged, the mode register set command must be issued to initialize the mode regis ter. a minimum of eight auto refresh cycles (cbr) are also required, and these may be done before or after programming the mode register.
eorex em484m3244vtc jul. 2006 www.eorex.com 10/18 simplified state diagram read read suspend write writea precharge reada suspend reada row active idle self refresh cbr refresh mode register set active power down write suspend writea suspend power on power down cke cke cke cke precharge c k e c k e s e l f s e l f e x i t ref mrs cke cke cke cke cke cke write read read read b s t write manual input automatic sequence
eorex em484m3244vtc jul. 2006 www.eorex.com 11/18 address input for mode register set ba1 ba0 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 operation mode cas latency bt burst length burst length sequential interleave a2 a1 a0 1 1 0 0 0 2 2 0 0 1 4 4 0 1 0 8 8 0 1 1 reserved reserved 1 0 0 reserved reserved 1 0 1 reserved reserved 1 1 0 full page reserved 1 1 1 burst type a3 interleave 1 sequential 0 cas latency a6 a5 a4 reserved 0 0 0 reserved 0 0 1 2 0 1 0 3 0 1 1 reserved 1 0 0 reserved 1 0 1 reserved 1 1 0 reserved 1 1 1 ba1 ba0 a11 a10 a9 a8 a7 operation mode 0 0 0 0 0 0 0 normal 0 0 0 0 1 0 0 burst read with single-bit write
eorex em484m3244vtc jul. 2006 www.eorex.com 12/18 burst type (a3) burst length a2 a1 a0 sequential addressing interleave addressing 2 x x 0 0 1 0 1 x x 0 1 0 1 0 4 x 0 0 0 1 2 3 0 1 2 3 x 0 1 1 2 3 0 1 0 3 2 x 1 0 2 3 0 1 2 3 0 1 x 1 1 3 0 1 2 3 2 1 0 8 0 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 0 1 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6 0 1 0 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5 0 1 1 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4 1 0 0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 1 0 1 5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2 1 1 0 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1 1 1 1 7 0 1 2 3 4 5 6 7 6 5 4 3 2 1 0 full page* n n n cn cn+1 cn+2?? - * page length is a function of i/o organization and column addressing 32 (ca0 ~ ca7): full page = 256bits 1. command truth table command symbol cke /cs /ras /cas /we ba0, ba1 a10 a11, a9~a10 n-1 n ignore command desl h x h x x x x x x no operation nop h x l h h h x x x burst stop bsth h x l h h l x x x read read h x l h l h v l v read with auto pre-charge reada h x l h l h v h v write writ h x l h l l v l v write with auto pre-charge writa h x l l h h v h v bank activate act h x l l h h v v v pre-charge select bank pre h x l l h l v l x pre-charge all banks pall h x l l h l x h x mode register set mrs h x l l l l l l v h = high level, l = low level, x = high or low leve l (don't care), v = valid data input
eorex em484m3244vtc jul. 2006 www.eorex.com 13/18 2. dqm truth table command symbol cke /cs n-1 n data write/output enable enb h x h data mask/output disable mask h x l upper byte write enable/output enable bsth h x l read read h x l read with auto pre-charge reada h x l write writ h x l write with auto pre-charge writa h x l bank activate act h x l pre-charge select bank pre h x l pre-charge all banks pall h x l mode register set mrs h x l h = high level, l = low level, x = high or low leve l (don't care), v = valid data input 3. cke truth table item command symbol cke /cs /ras /cas /we addr. n-1 n activating clock suspend mode entry h l x x x x x any clock suspend mode l l x x x x x clock suspend clock suspend mode exit l h x x x x x idle cbr refresh command ref h h l l l h x idle self refresh entry self h l l l l h x self refresh self refresh exit l h l h h h x l h h x x x x idle power down entry h l x x x x x power down power down exit l h x x x x x remark h = high level, l = low level, x = high or low lev el (don't care)
eorex em484m3244vtc jul. 2006 www.eorex.com 14/18 4. operative command table (note 7) current state /cs /r /c /w addr. command action idle h x x x x desl nop or power down (note 8 ) l h h x x nop or bst nop or power down (note 8 ) l h l h ba/ca/a10 read/reada illegal (note 9 ) l h l l ba/ca/a10 writ/writa illegal (note 9 ) l l h h ba/ra act row activating l l h l ba, a10 pre/pall nop l l l h x ref/self refresh or self refresh (note 10) l l l l op-code mrs mode register accessing row active h x x x x desl nop l h h x x nop or bst nop l h l h ba/ca/a10 read/reada begin read: determine ap (note 11 ) l h l l ba/ca/a10 writ/writa begin write: determine ap (note 11 ) l l h h ba/ra act illegal (note 9 ) l l h l ba, a10 pre/pall pre-charge (note 12 ) l l l h x ref/self illegal (note 10 ) l l l l op-code mrs illegal read h x x x x desl continue burst to end row active l h h h x nop continue burst to end row active l h h l x bst burst stop row active l h l h ba/ca/a10 read/reada terminate burst, new read: determine ap (note 13) l l l l ba/ca/a10 writ/writa terminate burst, start write: determine ap (note 13, 14) l l h h ba/ra act illegal (note 9 ) l l h l ba, a10 pre/pall terminate burst, pre-charging (note 10) l l l h x ref/self illegal l l l l op-code mrs illegal write h x x x x desl continue burst to end write recovering l h h h x nop continue burst to end write recovering l h h l x bst burst stop row active l h l h ba/ca/a10 read/reada terminate burst, start read: determine ap 7, 8 (note 13, 14) l l l l ba/ca/a10 writ/writa terminate burst, new write: determine ap 7 (note 13) l l h h ba/ra act illegal (note 9 ) l l h l ba, a10 pre/pall terminate burst, pre-charging (note 15) l l l h x ref/self illegal l l l l op-code mrs illegal remark h = high level, l = low level, x = high or low lev el (don't care)
eorex em484m3244vtc jul. 2006 www.eorex.com 15/18 4. operative command table (continued) (note 7) current state /cs /r /c /w addr. command action read with ap h x x x x desl continue burst to end pre-charging l h h h x nop continue burst to end pre-charging l h h l x bst illegal l h l h ba/ca/a10 read/reada illegal (note 9 ) l h l l ba/ca/a10 writ/writa illegal (note 9 ) l l h h ba/ra act illegal (note 9 ) l l h l ba, a10 pre/pall illegal (note 9 ) l l l h x ref/self illegal l l l l op-code mrs illegal write with ap h x x x x desl burst to end write recovering with auto pre-charge l h h h x nop continue burst to end write recovering with auto pre-charge l h h l x bst illegal l h l h ba/ca/a10 read/reada illegal (note 9 ) l h l l ba/ca/a10 writ/writa illegal (note 9 ) l l h h ba/ra act illegal (note 9 ) l l h l ba, a10 pre/pall illegal (note 9 ) l l l h x ref/self illegal l l l l op-code mrs illegal pre-charging h x x x x desl nop enter idle after t rp l h h h x nop nop enter idle after t rp l h h l x bst illegal l h l h ba/ca/a10 read/reada illegal (note 9 ) l h l l ba/ca/a10 writ/writa illegal (note 9 ) l l h h ba/ra act illegal (note 9 ) l l h l ba, a10 pre/pall nop enter idle after t rp l l l h x ref/self illegal l l l l op-code mrs illegal row activating h x x x x desl nop enter idle after t r cd l h h h x nop nop enter idle after t r cd l h h l x bst illegal l h l h ba/ca/a10 read/reada illegal (note 9 ) l h l l ba/ca/a10 writ/writa illegal (note 9 ) l l h h ba/ra act illegal (note 9, 16 ) l l h l ba, a10 pre/pall illegal (note 9 ) l l l h x ref/self illegal l l l l op-code mrs illegal remark h = high level, l = low level, x = high or low lev el (don't care), ap = auto pre-charge
eorex em484m3244vtc jul. 2006 www.eorex.com 16/18 4. operative command table (continued) (note 7) current state /cs /r /c /w addr. command action write recovering h x x x x desl nop enter row active after t dpl l h h h x nop nop enter row active after t dpl l h h l x bst nop enter row active after t dpl l h l h ba/ca/a10 read/reada start read, determine ap l h l l ba/ca/a10 writ/writa new write, determine ap (note 14 ) l l h h ba/ra act illegal (note 9 ) l l h l ba, a10 pre/pall illegal (note 9 ) l l l h x ref/self illegal l l l l op-code mrs illegal write recovering with ap h x x x x desl nop enter pre-charge after t dpl l h h h x nop nop enter pre-charge after t dpl l h h l x bst nop enter pre-charge after t dpl l h l h ba/ca/a10 read/reada illegal (note 9, 14 ) l h l l ba/ca/a10 writ/writa illegal (note 9 ) l l h h ba/ra act illegal (note 9 ) l l h l ba, a10 pre/pall illegal l l l h x ref/self illegal l l l l op-code mrs illegal refreshing h x x x x desl nop enter idle after t rc l h h x x nop/bst nop enter idle after t rc l h l x x read/writ illegal l l h x x act/pre/pall illegal l l l x x ref/self/mrs illegal mode register accessing h x x x x desl nop l h h h x nop nop l h h l x bst illegal l h l x x read/writ illegal l l x x x act/pre/pall/ ref/self/mrs illegal remark h = high level, l = low level, x = high or low lev el (don't care), ap = auto pre-charge note 7: all entries assume that cke was active (high level ) during the preceding clock cycle. note 8: if all banks are idle, and cke is inactive (low lev el), sdram will enter power down mode. all input buffers except cke will be disabled. note 9: illegal to bank in specified states; function may be legal in the bank indicated by bank address (ba), depending on the state of that bank. note 10: if all banks are idle, and cke is inactive (low le vel), sdram will enter self refresh mode. all input buffers except cke will be disabled. note 11: illegal if t rcd is not satisfied. note 12: illegal if t ras is not satisfied. note 13: must satisfy burst interrupt condition. note 14: must satisfy bus contention, bus turn around, and/ or write recovery requirements. note 15: must mask preceding data which don't satisfy t dpl . note 16: illegal if t rrd is not satisfied.
eorex em484m3244vtc jul. 2006 www.eorex.com 17/18 5. command truth table for cke current state cke /cs /r /c /w addr. action n-1 n self refresh h x x x x x x invalid, clk(n-1) would exit self refresh l h h x x x x self refresh recovery l h l h h x x self refresh recovery l h l h l x x illegal l h l l x x x illegal l l x x x x x maintain self refresh self refresh recovery h h h x x x x idle after t rc h h l h h x x idle after t rc h h l h l x x illegal h h l l x x x illegal h l h x x x x illegal h l l h h x x illegal h l l h l x x illegal h l l l x x x illegal power down h x x x x x x invalid, clk(n-1) would exit power down l h x x x x x exit power down idle l l x x x x x maintain power down mode both banks idle h h h x x x refer to operations in operative command table h h l h x x h h l l h x h h l l l h x refresh h h l l l l op-code refer to operations in operative command table h l h x x x h l l h x x h l l l h x h l l l l h x self refresh (note 17 ) h l l l l l op-code refer to operations in operative command table l x x x x x x power down (note 17 ) row active h x x x x x x refer to operations in operative command table l x x x x x x power down (note 17 ) any state other than listed above h h x x x x refer to operations in operative command table h l x x x x x begin clock suspend next cycle (note 18) l h x x x x x exit clock suspend next cycle l l x x x x x maintain clock suspend remark: h = high level, l = low level, x = high or low lev el (don't care) notes 17: self refresh can be entered only from the both bank s idle state. power down can be entered only from both banks idle or row active state. notes 18: must be legal command as defined in operative comm and table
eorex em484m3244vtc jul. 2006 www.eorex.com 18/18 package description dim millimeters inches min. nom. max. min. nom. max. a ? ? 1.20 ? ? 0.047 a1 0.05 ? 0.15 0.002 ? 0.006 a2 0.90 1.00 1.10 0.035 0.039 0.043 b 0.17 0.20 0.27 0.007 0.008 0.011 c 0.09 0.125 0.2 0.004 0.005 0.008 d 22.12 22.22 22.32 0.871 0.875 0.879 e 0.50 basic 0.020 basic e 11.56 11.76 11.96 0.455 0.463 0.471 e1 10.03 10.16 10.29 0.395 0.400 0.405 l 0.40 0.50 0.60 0.016 0.020 0.024 r 0.12 ? 0.25 0.005 ? 0.010 r1 0.12 ? ? 0.005 ? ? * controlling dimension: millimeters * dimension d does not include mold protrusion. mol d protrusion shall not exceed 0.15mm (0.006?) per side. dimension e1 does not include in terlead protrusion. interlead protrusion shall not exceed 0.25mm (0.01?) per side. * dimension b does not include dambar protrusions/i ntrusion. allowable dambar protrusion shall not cause the lead to be wider than the max b dimen sion by more than 0.13mm. dambar intrusion shall not cause the lead to be narrower t han the min b dimension by more than 0.07mm.

▲Up To Search▲

Price & Availability of EM484M3244VTC-75F

	To Download EM484M3244VTC-75F Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .